Mitsubishi Electric – offers a variety of semiconductors electronic devices, electro-optics that are contributing to the advancement of information-processing and telecommunications. The company develops and manufactures devices that provide higher operation stability and efficiency, next-generation optical devices that support today’s rapidly evolving optical telecommunications networks, high-frequency devices that are utilized in everything from mobile telephones to telecommunications satellites.
Mitsubishi Electric Optical Devices
Mitsubishi Electric has a range of lasers available, including a multi-mode semiconductor laser with a 638nm wavelength and 3.5W output (When pulse-driven) that provides highly visible, vibrant red colors for color projectors.
Red Laser Diodes
Technical report
Laser Diodes for Projectors
|
Type Number
|
Data Sheet
|
Supply situation
|
Chip type
|
Wavelength
|
Case temperature(℃)
|
Package
|
Application
|
|---|---|---|---|---|---|---|---|
ML501P73  |
 01/14/2020 341KB |
In production | Red LD | 638nm | -5～+40 | φ5.6mm Cap less | Display |
| ML562G75 |
– | In production | Red LD | 636nm | 0~+35 | φ9.0mm TO Flat glass cap | – |
| ML562G84 |
01/14/2020 424KB |
In production | Red LD | 638nm | 0～55℃ | φ9.0mm TO-CAN | Display |
| ML562G85 |
– | In production | Red LD | 639nm | 0～+45 | φ9.0mm TO Flat glass cap | – |
| ML562G86 |
– | In production | Red LD | 638nm | 0～+55 | φ9.0mm TO Flat glass cap | – |
Optical Fiber Communication Devices
ONU (subscriber’s optical network unit) / OLT (optical line terminal) / Optical fiber transmission system devices (wavelength division multiplexer, optical add-drop multiplexer)
Tunable Laser-diode Chip for Optical Fiber Communication ML9CP61
- Supports wide range of wavelengths for larger-capacity digital coherent communication with the OIF-400ZR-01.0 standard for 400Gbps optical transceivers
- Chip implementation supports downsizing of optical transceivers
50Gbps DFB Laser for 5G Mobile Base Stations ML771AA74T
- Supports 50Gbps high-speed, industry-leading wider operating temperature range (-40℃ to 90℃), large-capacity 5G communication in PAM4 format
- Compliant with TO-56 CAN standard for compact optical transceiver packages
Product Lineup for 5G Mobile Base Stations
| Transmission rate | Model | Laser chip type | Format |
|---|---|---|---|
| 50Gbps | ML771AA74T | DFB-LD | PAM4 |
| 100Gbps | ML770B64 | EML*1 | PAM4 |
| 25Gbps | ML760B54 | EML | NRZ*2 |
Wider-temperature-range CWDM 100Gbps (53Gbaud PAM4) EML Chip for Data Centers ML7CP70
- High-speed (53Gbaud PAM4), wider-temperature operation (5 to 85℃) with unique hybrid waveguide structure (Fig.1,2)
- Wide-temperature-range contributes to reduces power consumption and cost of optical transceivers for data centers
- Fig.1 – Wide-temperature-range 100 Gbps (53 Gbaud PAM4) EML chip structure (Images)
- Fig.2 53 Gbaud PAM4 eye diagram (back to back, Vpp=1.0V)
Selection Map – Optical Devices (Under 2.5Gbps)
Optical Devices (Over 10Gbps)
★: New Product ★★: Under Development
ADVANCE Magazine
Optical Fiber Communication Devices Laser diodes (Discrete)
|
Type Number
|
Data Sheet
|
Supply situation
|
Chip type (Data rate)
|
Wavelength(nm)
|
Case temperature(℃)
|
Package
|
|---|---|---|---|---|---|---|
| ML720K19S |
– | In production | FP-LD (2.5G) | 1310nm | -40～+85 | TO56-CAN |
| ML720K45S |
– | In production | FP-LD (～1.25G) | 1310nm | -40～+85 | TO56-CAN |
| ML720T39S |
– | In production | DFB-LD (2.5G) | 1310nm | -40～+95 | TO56-CAN |
| ML720Y49S |
– | In production | FP-LD (～1.25G) | 1310nm | -40～+85 | TO56-CAN |
| ML760B54-92A |
– | In production | EML (25G) | 2λ(1270，1330) | -40～+95 | TO56-CAN |
| ML760B54-92C |
– | In production | EML (25G) | 9λ (1273-1309nm) | -40～+95 | TO56-CAN |
| ML768AA42T |
– | In production | DFB-LD (10G) | 4λ(CWDM) | -5～+80 | TO56-CAN |
| ML768K42T |
– | In production | DFB-LD (10G) | 1310nm | -40～+95 | TO56-CAN |
| ML768LA42T |
– | In production | DFB-LD (10G) | 2λ(1270，1330) | -40～+95 | TO56-CAN |
| ML768T42T |
– | In production | DFB-LD (10G) | 1270nm | -5～+75 | TO56-CAN |
| ML769T56T |
– | In production | DFB-LD (10G) | 1270nm | -40～+90 | TO56-CAN |
| ML770B64 |
– | Under development | EML (100G) | 1310nm | -5~+80 | TO56-CAN |
| ML771AA72T |
– | Under development | EML (25G) | 3λ (1270/1310/1330nm) | -40～+90 | TO56-CAN |
| ML771AA74T |
– | Under development | DFB-LD (50G) | 1310nm | -40～+90 | TO56-CAN |
| ML771K56T |
– | In production | DFB-LD (25G) | 1310nm | -40～+90 | TO56-CAN |
| ML776H10 |
– | In production | FP-LD (-) | 1310nm | -40～+85 | TO56-CAN |
| ML7CP70 |
– | Under development | EML (100G) | 4λ(CWDM) | +5℃~+85℃ | |
| ML7xx58 |
– | In production | DFB-LD (25G) | 4λ(CWDM) | +20～+70 | Bare die |
| ML920LA16S |
– | In production | DFB-LD (～1.25G) | 1490nm | -40～+85 | TO56-CAN |
| ML920LA43S |
– | In production | DFB-LD (2.5G) | 1550nm | -20～+95 | TO56-CAN |
| ML920LA43S-1 |
– | In production | DFB-LD (2.5G) | 8λ(CWDM) | -10～+85 | TO56-CAN |
| ML920LA46S |
– | In production | DFB-LD (2.5G) | 1490nm | -40～+85 | TO56-CAN |
| ML958N60 |
– | In production | EML (10G) | 1550nm | -5～+80 | TO56-CAN |
| ML959A64 |
– | In production | EML (10G) | 1577nm | -5～+80 | TO56-CAN |
| ML959B56 |
– | In production | EML (10G) | 1550nm | -5～+80 | TO56-CAN |
| ML976H10 |
– | In production | FP-LD (-) | 1550nm | -40～+85 | TO56-CAN |
Optical Fiber Communication Devices Laser diode devices
